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Ordering number : ENA1010A
ECH8651R
N-Channel Power MOSFET
24V, 10A, 14m Ω , Dual ECH8
Features
http://onsemi.com
?
?
?
?
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
?
?
?
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
24
±12
10
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
60
1.4
1.5
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Product & Package Information
? Package : ECH8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
Top View
2.9
ECH8651R-TL-H
Packing Type : TL
Marking
0.15
8
5
0 to 0.02
TL
WV
Lot No.
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
1
2
3
4
8 : Drain
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7
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